parameter typ. max. units r ja maximum junction-to-ambient 75 100
hexfet power mosfet these n-channel mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. a thermally enhanced large pad leadframe has been incorporated into the standard sot-23 package to produce a hexfet power mosfet with the industry's smallest footprint. this package, dubbed the micro3 ? , is ideal for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro3 allows it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. the thermal resistance and power dissipation are the best available. thermal resistance v dss = 20v r ds(on) = 0.045 ultra low on-resistance n-channel mosfet sot-23 footprint low profile (<1.1mm) available in tape and reel fast switching lead-free halogen-free
parameter max. units v ds drain- source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 4.5v 4.2 i d @ t a = 70c continuous drain current, v gs @ 4.5v 3.4 a i dm pulsed drain current 33 p d @t a = 25c power dissipation 1.25 p d @t a = 70c power dissipation 0.8 linear derating factor 0.01 w/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c
micro3 ? d s g 3 1 2 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) pulse width 300 s; duty cycle surface mounted on fr-4 board, t
s d g electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 20 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.01 ??? v/c r ds(on) static drain-to-source on-resistance ??? 0.035 0.045 ??? 0.050 0.080 v gs(th) gate threshold voltage 0.60 ??? 1.2 v v gs(th) gate threshold voltage coefficient ??? -3.2 ??? mv/c gfs forward transconductance 5.8 ??? ??? s i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 25 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 q g total gate charge ??? 8.0 12 q gs gate-to-source charge ??? 1.8 2.7 q gd gate-to-drain ("miller") charge ??? 1.7 2.6 t d(on) turn-on delay time ??? 7.5 ??? t r rise time ??? 10 ??? t d(off) turn-off delay time ??? 54 ??? t f fall time ??? 26 ??? c iss input capacitance ??? 740 ??? c oss output capacitance ??? 90 ??? c rss reverse transfer capacitance ??? 66 ??? source-drain rating and characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 16 24 ns q rr reverse recovery charge ??? 8.6 13 nc mosfet symbol na ns a pf nc v ds = 10v v gs = 12v v gs = -12v conditions v gs = 0v, i d = 250ua reference to 25c, i d = 1.0ma v gs = 4.5v, i d = 4.2a ??? ??? 33 ??? ??? 1.3 conditions r d = 10 ? = 1.0mhz t j = 25c, i f = 1.3a di/dt = 100a/ s t j = 25c, i s = 1.3a, v gs = 0v showing the integral reverse p-n junction diode. r g = 6 v ds = 10v, i d = 4.0a v ds = 16v, v gs = 0v, t j = 70c a v gs = 5.0v i d = 1.0a v gs = 0v v ds = 15v i d = 4.0a v ds = v gs , i d = 250 a v gs = 2.5v, i d = 3.6a v ds = 16v, v gs = 0v v dd = 10v
product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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